Piezoelectric material-based devices have garnered considerable attention from scientists
and engineers due to their unique physical characteristics, resulting in numerous intriguing …

This paper presents a Piezoelectric micromechanical ultrasonic transducer (PMUT) based
on a Pt/ScAlN/Mo/SiO2/Si/SiO2/Si multilayer structure with a circular suspension film of …

To achieve high quality of AlN piezoelectric thin films with highly c-axis orientation and low
stress, 1-μm thick AlN films were deposited by magnetron sputtering on the 8-inch Mo/AlN …

This paper presents a comprehensive review of the design and implementation methods of
low-power piezoelectric energy harvesting circuits, which in the last few years have gained …

In the physical vapor transport (PVT) growth of AlN, re-oxidation of aluminum nitride (AlN)
source powder happening in the process of setting seed crystal into crucible seems to be …

Despite their efficacy in eliminating undesired crops and increasing yield, a range of
environmental issues and chronic ailments arise when hazardous chemicals are highly …

Abstract This work prepared Al 0.8 Sc 0. 2N thin films (AlScN) with a thickness of 1 μm on Φ=
200 mm (100) bare silicon wafers and studied the effects of sputtering power, substrate bias …

Improving the piezoelectric coefficient of w-AlN ensuring its structural stability is a serious
challenge both experimentally and theoretically. Here, the stability and piezoelectric …

Aluminum nitride (AlN) is a promising material for electromechanical and optoelectronic
applications due to its exceptional properties. The stability and control of the polarity of AlN …

In this study, we fabricated an AlN-based Schottky photodetector by thermal evaporation
technique using commercial AlN/n-Si heterojunction which was fabricated by hydride vapor …