Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

In this article, one feasible fabrication approach for novel fishbone FETs using the channel-
first and single work function metal (sWFM) processes is proposed and investigated by 3-D …

Recently, nanosheet FETs (NS FETs) have been introduced as promising candidates for
beyond 3-nm node technology. However, difficulties remain for mass production of the NS …

Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …

Abstract The nanosheet Field Effect Transistors (FETs) are the promising device architecture
for sub-5 nm technology node as per the International Roadmap for Devices and Systems …

Recently, short channel effects (SCE) and power consumption dissipation problems impose
tremendous challenges that need imperative actions to be taken to deal with for field effect …

Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its
enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping …

In this work, we propose a SiC-NSFET structure that uses a PTS scheme only under the
gate, with SiC layers under the source and drain, to improve the leakage current and thermal …

We propose a novel silicon-on-nothing (SON) structure with an air sub-fin for suppressing
the parasitic channel effects on stacked Si nanosheets (NS) gate-all-around (GAA) …

In this paper, a review is conducted on the novelties in the design, functionality, and
dependability of the suggested Gate All Around-Nanosheet Field Effect Transistors (GAA …