Decades of intense scientific research investigations clearly suggest that only a subset of a
large number of metals, ceramics, polymers, composites, and nanomaterials are suitable as …

The spin-based memory, spin transfer torque-magnetic random access memory (STT-
MRAM), has the potential to enhance the power efficiency of high density memory systems …

A typical method for normally-off operation, the metal–insulator–semiconductor-high
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …

A key hallmark of atomic layer deposition (ALD) is that it proceeds via self-limiting reactions.
For a good ALD process, long reactant exposure times beyond that required for saturation …

Motivated by the drawbacks of solution phase processing, an all‐dry resist formation
process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by …

HfO2 and ZrO2 are two high-k materials that are important in the downscaling of
semiconductor devices. Atomic-level control of material processing is required for the …

As semiconductor devices become miniaturized, the importance of the molecular-level
understanding of the fabrication processes is growing. Titanium nitride (TiN) is an important …

Amorphous IGZO (a‐IGZO) thin‐film transistors (TFTs) are standard backplane electronics to
power active‐matrix organic light‐emitting diode (AMOLED) televisions due to their high …

We investigated the surface reaction of the thermal atomic layer etching (ALE) of Al 2 O 3
film using fluorine (F) radicals and trimethylaluminum (TMA). As a strong fluorination source …

Defects play a significant role in atomic layer etching (ALE) processes; however, a
fundamental understanding at the atomic level is still lacking. To bridge this knowledge gap …