The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and
Applications, Second Edition explores the technology behind the spectacular growth in the …

A review of recent development in the deposition of II–VI and III–VI compound
semiconductors by MOCVD methods using single-compound precursors is presented. The …

This paper summarises results of the epitaxial growth of Ga (NAsBi) by metal–organic
vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations …

Publisher Summary Metal-organic chemical vapor deposition (MOCVD) has assumed a
great deal of technological importance in the fabrication of a number of opto-electronic and …

Tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) are getting more and more
established as group V precursors for the growth of V/III semiconductors by metal organic …

High quality GaAs layers have been grown by low pressure MOVPE on Ge (001) and Ge
(001) 9° off oriented in [110] direction by using a thin low temperature (LT) GaAs layer …

InAs/GaAs quantum dot laser diodes (QDLDs) on a GaAs substrate grown by utilizing all-
metalorganic chemical vapor deposition (MOCVD) technology with a p-AlGaAs cladding …

The suitability of diethylgallium ethoxide (Et 2 GaOEt) containing Ga–O bonds as a Ga
precursor for beta-gallium oxide (β-Ga 2 O 3) growth by metalorganic vapor phase epitaxy …

In this article, a high-composition (> 35%) thick-barrier (> 30 nm) AlGaN/AlN/GaN high-
electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low …

The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded
temperature ramped from 300 to 420 C is investigated. It is demonstrated that the graded …