Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

DD Nolte - Journal of Applied Physics, 1999 - pubs.aip.org
This review covers a spectrum of optoelectronic properties of and uses for semi-insulating
semiconductor heterostructures and thin films, including epilayers and quantum wells …

Development of an epitaxial growth technique using iii-v on a si platform for heterogeneous integration of membrane photonic devices on si

T Fujii, T Hiraki, T Aihara, H Nishi, K Takeda, T Sato… - Applied Sciences, 2021 - mdpi.com
Featured Application Optical interconnects for data centers. Abstract The rapid increase in
total transmission capacity within and between data centers requires the construction of low …

Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) …

JL Zilko, LJP Ketelsen, Y Twu, DP Wilt… - IEEE journal of …, 1989 - ieeexplore.ieee.org
The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure
requires three epitaxial growths and is designed to allow good control of the width of the …

Efficient digital receiver structure for trellis-coded signals transmitted through channels with intersymbol interference

K Wesoowski - Electronics Letters, 1987 - infona.pl
Efficient digital receiver structure for trellis-coded signals transmitted through channels with
intersymbol interference × Close The Infona portal uses cookies, ie strings of text saved by a …

Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition

T Sanada, K Nakai, K Wakao, M Kuno… - Applied physics …, 1987 - pubs.aip.org
We used metalorganic chemical vapor deposition to fabricate a planar-embedded InGaAsP I
lnP heterostructure laser with a semi-insulating InP current-blocking layer. The laser exhibits …

Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

S Asada, S Sugou, K Kasahara… - IEEE Journal of …, 1989 - ieeexplore.ieee.org
An effective device structure for reducing leakage current in buried heterostructure laser
diodes with semi-insulating InP blocking layers is analyzed. The analysis utilizes a …

High-speed, polyimide-based semi-insulating planar buried heterostructures

JE Bowers, U Koren, BI Miller, C Soccolich, WY Jan - Electronics Letters, 1987 - infona.pl
We describe planar buried heterostructure lasers which have low capacitance (lpF), large
bandwidth (19GHz), high power (> 20mW/facet) and high temperature operation (100? C) …

High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers

WH Cheng, CB Su, KD Buehring, SY Huang… - Applied physics …, 1987 - pubs.aip.org
The fabrication and performance of high-speed and high-power L3-, um lnGaAsP buried
crescent lasers with semi-insulating current blocking layers are reported. A modulation …

Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy

JL Zilko, BP Segner, UK Chakrabarti, RA Logan… - Journal of crystal …, 1991 - Elsevier
The effect of mesa shape on the planarity of InP regrowths produced by atmospheric
pressure and low pressure (0.1 atm) selective (SiO 2 masked) metalorganic vapor phase …

Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers with a semi-insulating GaInP: Fe burying layer

CA Barrios, S Lourdudoss, H Martinsson - Journal of applied physics, 2002 - pubs.aip.org
The leakage current in recently demonstrated GaAs/AlGaAs buried heterostructure (BH)
lasers with a semi-insulating (SI) GaInP: Fe burying layer has been theoretically and …