Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si (001)
High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned
structures. The patterned wafers have a V-shape Si (111) surface obtained by …
structures. The patterned wafers have a V-shape Si (111) surface obtained by …
Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport
M Sugiyama, H Fujii, T Katoh… - Progress in …, 2016 - Wiley Online Library
A quantum wire‐on‐well (WoW) structure, taking advantage of the layer undulation of an
InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to …
InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to …
[图书][B] МОС-гидридная эпитаксия в технологии материалов фотоники и электроники
Р Акчурин, А Мармалюк - 2022 - books.google.com
В книге рассмотрены теоретические и практические аспекты МОС-гидридной
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
Structural and optical properties of heavily doped Al x Ga1 − x As1 − y P y :Mg alloys produced by …
PV Seredin, AS Lenshin, AV Glotov, IN Arsentyev… - Semiconductors, 2014 - Springer
The high-resolution X-ray diffraction technique, Raman spectroscopy, and
photoluminescence spectroscopy are used to study the structural, optical, and electron …
photoluminescence spectroscopy are used to study the structural, optical, and electron …
InGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium
H Fujii, K Toprasertpong, H Sodabanlu… - Journal of Applied …, 2014 - pubs.aip.org
In this paper, we investigated the effects of carbon incorporation on photovoltaic
performance of InGaAs/GaAsP superlattice (SL) solar cells grown by low-temperature …
performance of InGaAs/GaAsP superlattice (SL) solar cells grown by low-temperature …
Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates
H Sodabanlu, Y Wang, K Watanabe… - Journal of Applied …, 2014 - pubs.aip.org
The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well
(MQW) solar cells on various mis-orientated GaAs substrates were studied using …
(MQW) solar cells on various mis-orientated GaAs substrates were studied using …
Effect of strain relaxation layer insertion on carrier recombination and escaping processes in superlattice solar cell structures using photoluminescence spectroscopy
T Nakamura, A Fukuyama, M Sugiyama… - Journal of Physics D …, 2018 - iopscience.iop.org
We discuss the effect of interlayer insertion into the light absorption region of a carrier
escape process for superlattice (SL) solar cells determined by the temperature dependence …
escape process for superlattice (SL) solar cells determined by the temperature dependence …
Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y …
PV Seredin, EP Domashevskaya, VE Ternovaya… - Physics of the Solid …, 2013 - Springer
It has been established that the photoluminescence spectra of heavily doped
heterostructures based on Al x Ga 1− x As) 1− y Si y solid solutions exhibit quenching of the …
heterostructures based on Al x Ga 1− x As) 1− y Si y solid solutions exhibit quenching of the …
[HTML][HTML] 1 eV Ga (NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
E Sterzer, O Maßmeyer, L Nattermann, K Jandieri… - AIP Advances, 2018 - pubs.aip.org
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von
Hänisch, W. Stolz, K. Volz; 1 eV Ga (NAsSb) grown by MOVPE using di-tertiary-butyl-arsano …
Hänisch, W. Stolz, K. Volz; 1 eV Ga (NAsSb) grown by MOVPE using di-tertiary-butyl-arsano …
The science and practice of metal-organic vapor phase epitaxy (MOVPE)
RM Biefeld, DD Koleske, JG Cederberg - Handbook of Crystal Growth, 2015 - Elsevier
This article summarizes the metal-organic vapor phase epitaxy (MOVPE) growth technique
and its use for the growth of compound semiconductor films and devices structures. In the …
and its use for the growth of compound semiconductor films and devices structures. In the …