Temperature invariant output slope efficiency and threshold current (T 0=∞) in the
temperature range of 5–75° C have been measured for 1.3 μm p-doped self-organized …

Developed from the authors' classroom-tested material, Semiconductor Laser Theory takes
a semiclassical approach to teaching the principles, structure, and applications of …

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot
semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the …

We show that even in quantum-dot (QD) lasers with very low threshold current densities
(J/sub th/= 40--50 A/cm/sup 2/at 300 K), the temperature sensitivity of the threshold current …

We directly measure the gain and threshold characteristics of three quantum dot laser
structures that are identical except for the level of modulation doping. The maximum modal …

We have studied the characteristics of 1.65-mum InAs self-organized quantum-dash lasers
grown on InP (001) substrates, wherein special techniques of p-doping of quantum dashes …

We present a general theoretical model for the optical differential gain in semiconductor
lasers. The model describes self assembly quantum dots (QDs), self assembly quantum …

We have investigated the molecular-beam epitaxial growth and structural and
photoluminescence characteristics of self-organized In As∕ Ga As quantum dot bilayers, in …

We have investigated the threshold behavior of GaAs-based InAs self-organized quantum
dot microtube lasers. The laser heterostructures were grown by molecular beam epitaxy and …

A systematic investigation of the temperature characteristics of quantum dot lasers emitting
at 1.3 μ m is reported. The temperature dependence of carrier lifetime, radiative efficiency …