Semiconductor solar cells: Recent progress in terrestrial applications
In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year.
Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon …
Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon …
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
JF Geisz, DJ Friedman, JS Ward, A Duda… - Applied Physics …, 2008 - pubs.aip.org
A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in
a monolithically grown, triple-junction III–V solar cell structure in which each active junction …
a monolithically grown, triple-junction III–V solar cell structure in which each active junction …
High-efficiency GaInP∕ GaAs∕ InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
The authors demonstrate a thin, Ge-free III–V semiconductor triple-junction solar cell device
structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun …
structure that achieved 33.8%, 30.6%, and 38.9% efficiencies under the standard 1 sun …
An efficient and stable solar flow battery enabled by a single-junction GaAs photoelectrode
Converting and storing solar energy and releasing it on demand by using solar flow
batteries (SFBs) is a promising way to address the challenge of solar intermittency. Although …
batteries (SFBs) is a promising way to address the challenge of solar intermittency. Although …
Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters
MW Wanlass, SP Ahrenkiel… - … Record of the Thirty …, 2005 - ieeexplore.ieee.org
We discuss lattice-mismatched (LMM) approaches utilizing compositionally step-graded
layers and buffer layers that yield III-V photovoltaic devices with performance parameters …
layers and buffer layers that yield III-V photovoltaic devices with performance parameters …
Strain relaxation properties of InAsyP1− y metamorphic materials grown on InP substrates
The strain relaxation mechanism and defect properties of compositionally step-graded InAs
y P 1− y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP …
y P 1− y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP …
High-efficiency III-V multijunction solar cells
DJ Friedman, JM Olson, SR Kurtz - Handbook of Photovoltaic …, 2011 - Wiley Online Library
The large-scale use of photovoltaics is becoming a reality. The total worldwide solar cell
production in 2009 was> 10 gigawatts (GW), mostly in the form of flat-plate Si solar cells …
production in 2009 was> 10 gigawatts (GW), mostly in the form of flat-plate Si solar cells …
In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells
We have recently reported high efficiencies in a monolithic III–V triple-junction solar cell
design that is grown inverted with a metamorphic 1.0 eV bottom In. 27Ga. 73As junction. The …
design that is grown inverted with a metamorphic 1.0 eV bottom In. 27Ga. 73As junction. The …
InGaAs/AlInAs strain-compensated superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions
Short-wavelength (λ∼ 3.6 μm) quantum-cascade-laser (QCL) designs, employing a
metamorphic buffer layer (MBL) on a GaAs substrate, have been developed for strong …
metamorphic buffer layer (MBL) on a GaAs substrate, have been developed for strong …
Inverted GaInP/(In) GaAs/InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions
We demonstrate high efficiency performance in two ultra-thin, Ge-free III–V semiconductor
triple-junction solar cell device designs grown in an inverted configuration. Low-stress …
triple-junction solar cell device designs grown in an inverted configuration. Low-stress …