The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

Abstract Scanning Spreading Resistance Microscopy is a well-established technique for
obtaining quantitative two-and three-dimensional carrier profiles in semiconductor devices …

In this study, we investigate the diffusion of Si donors in AlN. Amorphous S i 1− x N x
sputtered on the surface of bulk AlN with low dislocation density is used as a Si source. The …

In lithium-ion batteries (LIBs), the ambipolar diffusion coefficient of lithium in the active
material particles of the composite electrodes is a key parameter for the battery performance …

Two‐dimensional dopant profiling is vital for the modelling, design, diagnosis and
performance improvement of semiconductor devices and related research and …

Reported here is a new chemical route for the wet chemical functionalization of germanium
(Ge), whereby arsanilic acid is covalently bound to a chlorine (Cl)-terminated surface. This …

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor
complexes (D n V with n⩽ 4) that deactivate the donors. This work unambiguously …

Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

While nitrogen doping has been investigated extensively in silicon, there is only limited
information on its interaction with vacancies in germanium, despite most point defect …

Phosphorus and boron diffusion in silicon at temperatures between 900 and 1050 C was
studied both in bulk and nanostructured samples by means of scanning spreading …