Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide range of potential applications. These porous Ge networks are characterized by physical …
We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …
Abstract Due to Silicon (Si) material abundance and lower cost, integration of high efficiency III-V solar cells on Si substrates is of major importance for future solar energy harvesting …
Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of …
The extended analysis of influence of the surface hydrogen passivation degree on morphology of mesoporous Ge (PGe) formed by Bipolar Electrochemical Etching technique …
A Boucherif, A Jaouad, R Cheriton, S Han… - Proceedings of the …, 2015 - csstc2015.ca
Monolithic integration of III-V compound semiconductors on a silicon (Si) substrate is of major importance for future electronics, optoelectronics and photovoltaic devices. Successful …
Cette première section présente les concepts liés à l'oxydation électrochimique, ou anodisation. Etant donné notre intérêt pour la formation de silice anodique, la majorité de …