Review on III–V semiconductor nanowire array infrared photodetectors
Z Li, Z He, C Xi, F Zhang, L Huang, Y Yu… - Advanced Materials …, 2023 - Wiley Online Library
In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …
photodetector applications due to their direct and suitable bandgap, unique optical and …
Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D …
Flexible optoelectronics have attracted much attention in recent years for their potential
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
Waveguide coupled III-V photodiodes monolithically integrated on Si
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an
important step towards integrated optical links. In the present work, we demonstrate scaled …
important step towards integrated optical links. In the present work, we demonstrate scaled …
Engineering III–V semiconductor nanowires for device applications
III–V semiconductor nanowires offer potential new device applications because of the
unique properties associated with their 1D geometry and the ability to create quantum wells …
unique properties associated with their 1D geometry and the ability to create quantum wells …
A new strategy for selective area growth of highly uniform InGaAs/InP multiple quantum well nanowire arrays for optoelectronic device applications
III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact
light sources and photodetectors from visible to infrared spectral region. However, most of …
light sources and photodetectors from visible to infrared spectral region. However, most of …
Semiconductor nanowire arrays for high‐performance miniaturized chemical sensing
Chemiresistive sensing is one of the most promising technologies for portable and
miniaturized chemical sensing, with applications ranging from air quality monitoring to …
miniaturized chemical sensing, with applications ranging from air quality monitoring to …
Extraordinary temperature dependent second harmonic generation in atomically thin layers of transition‐metal dichalcogenides
Atomically thin transition metal dichalcogenides (TMDs) are important semiconducting
materials because of their interesting layer dependent properties. Recently, optical second …
materials because of their interesting layer dependent properties. Recently, optical second …
Injection-free multiwavelength electroluminescence devices based on monolayer semiconductors driven by an alternating field
J Feng, Y Li, J Zhang, Y Tang, H Sun, L Gan… - Science …, 2022 - science.org
Two-dimensional (2D) semiconductors have emerged as promising candidates for various
optoelectronic devices especially electroluminescent (EL) devices. However, progress has …
optoelectronic devices especially electroluminescent (EL) devices. However, progress has …
Flexible InP–ZnO nanowire heterojunction light emitting diodes
Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely
challenging task of integrating III–V or III–N semiconductor devices such as LEDs and lasers …
challenging task of integrating III–V or III–N semiconductor devices such as LEDs and lasers …