Investigation of electric field effect on defects in GaAsN by admittance spectroscopy
JV Li, MH Wong - Thin Solid Films, 2022 - Elsevier
We use the Arrhenius transformation and matching (ATM) method to extract activation
energy and attempt-to-escape frequency of the nitrogen-related defect (E1) in GaAsN from …
energy and attempt-to-escape frequency of the nitrogen-related defect (E1) in GaAsN from …
Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light
In the present study, the performance parameters of GaAsN dilute nitride-based
semiconductor solar cell with and without AlGaAs blocking layers have been investigated in …
semiconductor solar cell with and without AlGaAs blocking layers have been investigated in …
Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence
S Ferdous, H Iwai, N Kamata, H Yaguchi… - physica status solidi …, 2021 - Wiley Online Library
Presence and influence of nonradiative recombination (NRR) centers in an intermediate
band (IB)‐type material, GaP1–xNx (x= 0.75%), are studied by two‐wavelength excited …
band (IB)‐type material, GaP1–xNx (x= 0.75%), are studied by two‐wavelength excited …
Design and Simulation of GaAsN Based Solar Cell with AlGaAs blocking layer for Harvesting Visible to Near-infrared Light
In the present study, the performance parameters of GaAsN dilute nitride-based
semiconductor solar cell with and without AlGaAs blocking layers have been investigated in …
semiconductor solar cell with and without AlGaAs blocking layers have been investigated in …