Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - 2012 IEEE International Conference on …, 2012 - ieeexplore.ieee.org
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …
被引用次数：31 相关文章

Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - 2012 IEEE International Conference on … - infona.pl
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …
[PDF] psu.edu

[PDF][PDF] Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - Citeseer
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …
[PDF] researchgate.net

[PDF][PDF] Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - researchgate.net
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …
[PDF] purdue.edu

[PDF][PDF] Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - engineering.purdue.edu
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …

Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - 2012 IEEE International Conference on … - infona.pl
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …