Growth and characterization of InGaAsP lattice-matched to InP

PA Houston - Journal of Materials Science, 1981 - Springer
The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …
被引用次数：31 相关文章

[引用][C] Growth and characterization of InGaAsP lattice-matched to InP

PA Houston - Journal of Materials Science, 1981 - cir.nii.ac.jp
Growth and characterization of InGaAsP lattice-matched to InP | CiNii Research CiNii 国立
情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす …

[引用][C] GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP

PA HOUSTON - 1981 - pascal-francis.inist.fr
Keyword (fr) COMPOSE MINERAL METHODE EN SOLUTION DEPOT CHIMIQUE PHASE
VAPEUR CONDENSATION FAISCEAU MOLECULAIRE DOPAGE ACCOMMODATION …

[引用][C] Growth and characterization of InGaAsP lattice-matched to InP

PA Houston - Journal of Materials Science, 1981 - ui.adsabs.harvard.edu
Growth and characterization of InGaAsP lattice-matched to InP - NASA/ADS Now on home
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[引用][C] Growth and characterization of InGaAsP lattice-matched to InP

PA Houston - Journal of Materials Science, 1981 - Springer