Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi, EM Thatcher… - Physical Review B, 2015 - APS
The ultrafast coupling dynamics of coherent optical phonons and the photoexcited electron-
hole plasma in the indirect gap semiconductor GaP are investigated by experiment and …
被引用次数：38 相关文章
[PDF] researchgate.net

[PDF][PDF] Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi… - … REVIEW B Phys Rev …, 2015 - researchgate.net
Group III-V semiconductors have long been important materials with significant advantages
over silicon in applications such as transistors [1], optical communications [2], solid state …

Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi… - Physical Review …, 2015 - par.nsf.gov
The intermediate period gap, discovered by Kepler, is an observed dearth of stellar rotation
periods in the temperature–period diagram at∼ 20 days for G dwarfs and up to∼ 30 days …

Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi… - Physical …, 2015 - ui.adsabs.harvard.edu
The ultrafast coupling dynamics of coherent optical phonons and the photoexcited electron-
hole plasma in the indirect gap semiconductor GaP are investigated by experiment and …
[PDF] archive.org

[PDF][PDF] Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi, EM Thatcher… - Phys Rev B - scholar.archive.org
Group III-V semiconductors have long been important materials with significant advantages
over silicon in applications such as transistors1, optical communications2, solid state …

[引用][C] Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi… - Physical Review …, 2015 - cir.nii.ac.jp
Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor |
CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …
[PDF] nims.go.jp

[PDF][PDF] Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer, A Rustagi… - PHYSICAL REVIEW B …, 2015 - nims.go.jp
Group III-V semiconductors have long been important materials with significant advantages
over silicon in applications such as transistors [1], optical communications [2], solid state …

[引用][C] Dynamically coupled plasmon-phonon modes in GaP: An indirect-gap polar semiconductor

K Ishioka, K Brixius, U Höfer… - … REVIEW B Phys …, 2015 - American Physical Society