[HTML][HTML] Modeling of gate stack patterning for advanced technology nodes: A review
X Klemenschits, S Selberherr, L Filipovic - Micromachines, 2018 - mdpi.com
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
[PDF][PDF] Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
X Klemenschits, S Selberherr… - Miniaturized Transistors - openresearchlibrary.org
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
X Klemenschits, S Selberherr… - Micromachines, 2018 - pubmed.ncbi.nlm.nih.gov
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
[引用][C] Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
X Klemenschits, S Selberherr… - Miniaturized …, 2019 - repositum.tuwien.at
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Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review.
X Klemenschits, S Selberherr, L Filipovic - Micromachines, 2018 - europepmc.org
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
[PDF][PDF] Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
X Klemenschits, S Selberherr, L Filipovic - iue.tuwien.ac.at
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
[引用][C] M} odeling of {G} ate {S} tack {P} atterning for {A} dvanced {T} echnology {N} odes:{A}{R} eview}
X Klemenschits, S Selberherr, L Filipovic - M} iniaturized {T} ransistors} - publik.tuwien.ac.at
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review.
X Klemenschits, S Selberherr, L Filipovic - Micromachines, 2018 - search.ebscohost.com
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
[HTML][HTML] Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
X Klemenschits, S Selberherr… - Miniaturized Transistors, 2019 - books.google.com
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
X Klemenschits, S Selberherr, L Filipovic - Micromachines, 2018 - search.proquest.com
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …