Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices

U Celano, L Goux, A Belmonte, K Opsomer… - Nano …, 2014 - ACS Publications
The basic unit of information in filamentary-based resistive switching memories is physically
stored in a conductive filament. Therefore, the overall performance of the device is …
被引用次数：356 相关文章

[引用][C] Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

U CELANO, L GOUX, W VANDERVORST… - Nano letters …, 2014 - pascal-francis.inist.fr
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive
Memory Devices CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices

U Celano, L Goux, A Belmonte, K Opsomer… - Nano …, 2014 - pubmed.ncbi.nlm.nih.gov
The basic unit of information in filamentary-based resistive switching memories is physically
stored in a conductive filament. Therefore, the overall performance of the device is …

[引用][C] Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

U Celano, L Goux, A Belmonte, K Opsomer, A Franquet… - Nano Letters, 2014 - cir.nii.ac.jp
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory
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[引用][C] Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices

U Celano, L Goux, A Belmonte, K Opsomer, A Franquet… - 2014 - imec-publications.be
Three-dimensional observation of the conductive filament in nanoscaled resistive memory
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[引用][C] Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

U Celano, L Goux, A Belmonte, K Opsomer… - Nano …, 2014 - ui.adsabs.harvard.edu
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory
Devices - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

U Celano, L Goux, A Belmonte, K Opsomer… - Nano Letters, 2014 - europepmc.org
The basic unit of information in filamentary-based resistive switching memories is physically
stored in a conductive filament. Therefore, the overall performance of the device is …

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices

U Celano, L Goux, A Belmonte, K Opsomer… - NANO …, 2014 - biblio.ugent.be
The basic unit of information in filamentary-based resistive switching memories is physically
stored in a conductive filament. Therefore, the overall performance of the device is …

[引用][C] Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

U CELANO, L GOUX, A BELMONTE… - Nano …, 2014 - American Chemical Society