An analytical model of single-event transients in double-gate MOSFET for circuit simulation

YM Aneesh, SR Sriram, KR Pasupathy… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …
被引用次数：19 相关文章
[PDF] google.com

[PDF][PDF] An analytical model of single-event transients in double-gate MOSFET for circuit simulation

YM Aneesh, SR Sriram, KR Pasupathy… - IEEE Transactions on …, 2019 - drive.google.com
In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …

[引用][C] An Analytical Model of Single-Event Transients in Double-Gate MOSFET for Circuit Simulation

YM Aneesh, SR Sriram… - IEEE Transactions on …, 2019 - ui.adsabs.harvard.edu
An Analytical Model of Single-Event Transients in Double-Gate MOSFET for Circuit Simulation
- NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS An Analytical …