[HTML][HTML] An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor
Y Zhang, H Lu, C Liu, Y Zhang, R Yao, X Liu - Micromachines, 2023 - mdpi.com
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
[HTML][HTML] An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor
Y Zhang, H Lu, C Liu, Y Zhang, R Yao, X Liu - Micromachines, 2023 - ncbi.nlm.nih.gov
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor
Y Zhang, H Lu, C Liu, Y Zhang, R Yao… - …, 2023 - pubmed.ncbi.nlm.nih.gov
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor
Y Zhang, H Lu, C Liu, R Yao, X Liu - Micromachines, 2023 - europepmc.org
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor
Y Zhang, H Lu, C Liu, Y Zhang, R Yao, X Liu - Micromachines, 2023 - search.proquest.com
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor.
Y Zhang, H Lu, C Liu, Y Zhang, R Yao… - Micromachines, 2023 - search.ebscohost.com
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor.
Y Zhang, H Lu, C Liu, R Yao, X Liu - Micromachines, 2023 - europepmc.org
In this paper, a single-event transient model based on the effective space charge for
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …
MOSFETs is proposed. The physical process of deposited and moving charges is analyzed …