GaInAs (P)/InP quantum well structures grown by gas source molecular beam epitaxy

H Temkin, MB Panish, PM Petroff, RA Hamm… - Applied physics …, 1985 - pubs.aip.org
We describe optical properties of single and multiple quantum well structures grown by gas
source molecular beam epitaxy. Absorption and photoluminescence were used in …
被引用次数：103 相关文章

GaInAs (P)/InP quantum well structures grown by gas source molecular beam epitaxy

H Temkin, MB Panish, PM Petroff… - Applied Physics …, 1985 - ui.adsabs.harvard.edu
We describe optical properties of single and multiple quantum well structures grown by gas
source molecular beam epitaxy. Absorption and photoluminescence were used in …

GaInAs (P)/InP quantum well structures grown by gas source molecular beam epitaxy

H Temkin, MB Panish, PM Petroff, RA Hamm… - Applied Physics …, 1985 - pubs.aip.org
We describe optical properties of single and multiple quantum well structures grown by gas
source molecular beam epitaxy. Absorption and photoluminescence were used in …

GaInAs (P)/InP quantum well structures grown by gas source molecular beam epitaxy

H Temkin, MB Panish, PM Petroff, RA Hamm… - Applied Physics …, 1985 - cir.nii.ac.jp
抄録< jats: p> We describe optical properties of single and multiple quantum well structures
grown by gas source molecular beam epitaxy. Absorption and photoluminescence were …

[引用][C] GaInAs (P)/InP quantum well structures grown by gas source molecular beam epitaxy

H TEMKIN, MB PANISH, PM PETROFF… - Applied physics …, 1985 - pascal-francis.inist.fr
GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy CNRS
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[引用][C] GaInAs (P)/InP quantum well structures grown by gas source molecular beam epitaxy

H TEMKIN, MB PANISH… - Applied …, 1985 - American Institute of Physics