Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

J Ibáñez, R Kudrawiec, J Serafinczuk… - Journal of Applied …, 2012 - pubs.aip.org
We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and …
被引用次数：39 相关文章

Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáñez, R Cuscó, R Kudrawiec… - Journal of Applied …, 2012 - cir.nii.ac.jp
抄録< jats: p> We use Raman scattering to investigate the composition behavior of the E2h
and A1 (LO) phonons of InxGa1− xN and to evaluate the role of lateral compositional …

Raman scattering by the E2h and A1(LO) phonons of InxGa1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáñez, R Cuscó… - Journal of Applied …, 2012 - ui.adsabs.harvard.edu
We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In x Ga 1-x N and to evaluate the role of lateral compositional fluctuations and in …
[PDF] archive.org

[PDF][PDF] Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáņez, R Cuscó, R Kudrawiec… - JOURNAL OF …, 2012 - scholar.archive.org
We use Raman scattering to investigate the composition behavior of the E2h and A1 (LO)
phonons of InxGa1ĀxN and to evaluate the role of lateral compositional fluctuations and in …
[PDF] researchgate.net

[PDF][PDF] Raman scattering by the E 2h and A (LO) phonons of In x Ga N epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

M Henini, C Boney, A Bensaoula… - Journal of Applied …, 2012 - researchgate.net
We use Raman scattering to investigate the composition behavior of the E2h and A1 (LO)
phonons of InxGa1ÀxN and to evaluate the role of lateral compositional fluctuations and in …

Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáñez, R Cuscó, R Kudrawiec… - Journal of Applied …, 2012 - pubs.aip.org
We use Raman scattering to investigate the composition behavior of the E2h and A1 (LO)
phonons of InxGa1ĀxN and to evaluate the role of lateral compositional fluctuations and in …

Raman scattering by the E2h and A1(LO) phonons of InxGa1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

R Oliva, J Ibanez, R Cusco, L Artus… - Journal of Applied …, 2012 - inis.iaea.org
[en] We use Raman scattering to investigate the composition behavior of the E 2h and A 1
(LO) phonons of In x Ga 1-x N and to evaluate the role of lateral compositional fluctuations …

Raman scattering by the E 2h and A 1 (LO) phonons of In xGa 1-xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáñez Insa, R Cuscó, R Kudrawiec… - 2012 - digital.csic.es
We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In xGa 1-xN and to evaluate the role of lateral compositional fluctuations and in …
[PDF] core.ac.uk

[PDF][PDF] Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáņez, R Cuscó, R Kudrawiec… - JOURNAL OF APPLIED …, 2012 - core.ac.uk
We use Raman scattering to investigate the composition behavior of the E2h and A1 (LO)
phonons of InxGa1ĀxN and to evaluate the role of lateral compositional fluctuations and in …
[PDF] archive.org

[PDF][PDF] Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy

R Oliva, J Ibáņez, R Cuscó, R Kudrawiec… - JOURNAL OF …, 2012 - scholar.archive.org
We use Raman scattering to investigate the composition behavior of the E2h and A1 (LO)
phonons of InxGa1ĀxN and to evaluate the role of lateral compositional fluctuations and in …