Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

J Kamimura, P Bogdanoff, M Ramsteiner… - Semiconductor …, 2016 - iopscience.iop.org
InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …
被引用次数：16 相关文章

Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

J Kamimura, P Bogdanoff… - Semiconductor …, 2016 - ui.adsabs.harvard.edu
InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …

Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

J Kamimura, M Ramsteiner, L Geelhaar… - Semiconductor …, 2016 - inis.iaea.org
[en] InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …