Dopant, composition and carrier profiling for 3D structures

A Franquet, U Celano, K Paredis… - Materials Science in …, 2017 - Elsevier
With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …
被引用次数：51 相关文章

[引用][C] Dopant, composition and carrier profiling for 3D-structures

W Vandervorst, C Fleischmann, J Bogdanowicz… - 2017 - imec-publications.be
Dopant, composition and carrier profiling for 3D-structures Toggle navigation My submissions
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