Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K Ono, H Ohta, K Eriguchi - Thin Solid Films, 2010 - Elsevier
Plasma–surface interactions in Cl-and Br-based plasmas have been studied for advanced
front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication. A Monte …
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[引用][C] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K Ono, H Ohta, K Eriguchi - Thin Solid Films, 2010 - ui.adsabs.harvard.edu
Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device
fabrication: A numerical and experimental study - NASA/ADS Now on home page ads icon ads …

[引用][C] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K ONO, H OHTA, K ERIGUCHI - Thin solid films, 2010 - pascal-francis.inist.fr
Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI
device fabrication: A numerical and experimental study CNRS Inist Pascal-Francis CNRS …

[引用][C] Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K Ono, H Ohta, K Eriguchi - Thin Solid Films, 2010 - cir.nii.ac.jp
Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device
fabrication: A numerical and experimental study | CiNii Research CiNii 国立情報学研究所 学術 …

Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K Ono, H Ohta, K Eriguchi - Thin Solid Films, 2010 - infona.pl
Plasma–surface interactions in Cl-and Br-based plasmas have been studied for advanced
front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication. A Monte …

Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K Ono, H Ohta, K Eriguchi - Thin Solid Films, 2010 - inis.iaea.org
[en] Plasma-surface interactions in Cl-and Br-based plasmas have been studied for
advanced front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication …

Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K Ono, H Ohta, K Eriguchi - Thin Solid Films, 2010 - osti.gov
Plasma-surface interactions in Cl-and Br-based plasmas have been studied for advanced
front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication. A Monte …

[引用][C] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study

K ONO, H OHTA, K ERIGUCHI - Thin solid films, 2010 - Elsevier