Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

LJJ Tan, WM Soong, JPR David… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
The reverse-bias current-voltage characteristics of a series of Ga 1-x ln x N y As 1-y diodes
with bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and …
被引用次数：10 相关文章
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[PDF][PDF] Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

LJJ Tan, WM Soong, JPR David, JS Ng - IEEE TRANSACTIONS ON …, 2011 - academia.edu
The reverse-bias current–voltage characteristics of a series of Gai-x Inx Ny Asi-y diodes with
bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and generation …

[引用][C] Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

LJJ TAN, WAIMUN SOONG… - IEEE transactions on …, 2011 - pascal-francis.inist.fr
Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs CNRS Inist Pascal-Francis
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Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

LJJ Tan, WM Soong, JPR David, JS Ng - IEEE Transactions on Electron …, 2011 - infona.pl
The reverse-bias current-voltage characteristics of a series of Ga 1-x ln x N y As 1-y diodes
with bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and …

[引用][C] Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

LJJ Tan, WM Soong, JPR David… - IEEE Transactions on …, 2011 - ui.adsabs.harvard.edu
Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs - NASA/ADS Now on home
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[引用][C] Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

LJJ TAN, WAIMUN SOONG… - IEEE …, 2011 - Institute of Electrical and Electronics …