Low-temperature and ammonia-free epitaxy of the GaN/AlGaN/GaN heterostructure

DM Tobaldi, V Triminì, A Cretì… - ACS Applied …, 2021 - ACS Publications
Wide band-gap semiconductors are very attractive because of their broad applications as
electronics and optoelectronics materials, GaN-based materials being by far the most …

[PDF][PDF] Low-temperature and ammonia-free epitaxy of GaN/AlGaN/GaN heterostructure

DM Tobaldi, V Triminì, A Cretì, M Lomascolo… - academia.edu
Wide band gap semiconductors are very attractive because of their broad applications as
electronics and optoelectronics materials− GaN-based materials being by far the most …

Low-temperature and ammonia-free epitaxy of GaN/AlGaN/GaN heterostructure

DM Tobaldi, V Triminì, A Cretì, M Lomascolo… - 2021 - chemrxiv.org
Wide band gap semiconductors are very attractive because of their broad applications as
electronics and optoelectronics materials− GaN-based materials being by far the most …

[PDF][PDF] Low-temperature and ammonia-free epitaxy of GaN/AlGaN/GaN heterostructure

DM Tobaldi, V Triminì, A Cretì, M Lomascolo… - scholar.archive.org
Wide band gap semiconductors are very attractive because of their broad applications as
electronics and optoelectronics materials− GaN-based materials being by far the most …

[PDF][PDF] Low-temperature and ammonia-free epitaxy of GaN/AlGaN/GaN heterostructure

DM Tobaldi, V Triminì, A Cretì, M Lomascolo… - academia.edu
Wide band gap semiconductors are very attractive because of their broad applications as
electronics and optoelectronics materials− GaN-based materials being by far the most …