Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance

J Kopaczek, R Kudrawiec, WM Linhart, KM Yu… - Applied Physics …, 2013 - pubs.aip.org
GaSb 1− x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
被引用次数：48 相关文章

Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance

J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - cir.nii.ac.jp
抄録< jats: p> GaSb1− xBix layers with 0 &lt; x≤ 0.042 have been studied by
photoreflectance in 15–290 K temperature range. We found that due to the incorporation of …

Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance

J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - pubs.aip.org
GaSb1ĄxBix layers with 0< x 0.042 have been studied by photoreflectance in 15–290K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …

Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance

J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - wrap.warwick.ac.uk
GaSb1− xBix layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …

Temperature dependence of the band gap of GaSb1-xBix alloys with 0< x≤ 0.042 determined by photoreflectance

J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - scholars.cityu.edu.hk
GaSb 1-x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15-290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …

Temperature dependence of the band gap of GaSb {sub 1− x} Bi {sub x} alloys with 0< x≤ 0.042 determined by photoreflectance

J Kopaczek, J Misiewicz, WM Linhart, MK Rajpalke… - Applied Physics …, 2013 - osti.gov
GaSb {sub 1− x} Bi {sub x} layers with 0< x≤ 0.042 have been studied by photoreflectance
in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the …

Temperature dependence of the band gap of GaSb1-xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - ui.adsabs.harvard.edu
GaSb 1-x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15-290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

J Kopaczek, J Misiewicz, R Kudrawiec… - Applied Physics …, 2013 - inis.iaea.org
[en] GaSb 1− x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–
290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb …