Device design, simulation and qualitative analysis of gaasp/6h-sic/gan metal semiconductor field effect transistor

B Balaji, KS Rao, M Aditya, KG Sravani - Silicon, 2022 - Springer
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …
被引用次数：5 相关文章

Device Design, Simulation and Qualitative Analysis of GaAsP/6H-SiC/GaN Metal Semiconductor Field Effect Transistor

B Balaji, KS Rao, M Aditya, KG Sravani - Silicon, 2022 - search.proquest.com
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …

Device Design, Simulation and Qualitative Analysis of GaAsP/6H-SiC/GaN Metal Semiconductor Field effect transistor

B BALAJI, KS Rao, M Aditya, KG Sravani - 2021 - researchsquare.com
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …