High resistivity SOI wafers and a method of manufacturing thereof

I Peidous, S Kommu, G Wang, SG Thomas - US Patent 10,079,170, 2018 - Google Patents
A high resistivity single crystal semiconductor handle structure for use in the manufacture of
SOI structure is provided. The handle structure comprises an intermediate semiconductor …
被引用次数：17 相关文章

High resistivity soi wafers and a method of manufacturing thereof

I Peidous, S Kommu, G Wang… - US Patent App. 15 …, 2016 - Google Patents
A high resistivity single crystal semiconductor handle structure for use in the manufacture of
SOI structure is provided. The handle structure comprises an intermediate semiconductor …

High resistivity SOI wafers and a method of manufacturing thereof

I Peidous, S Kommu, G Wang… - US Patent …, 2018 - freepatentsonline.com
A high resistivity single crystal semiconductor handle structure for use in the manufacture of
SOI structure is provided. The handle structure comprises an intermediate semiconductor …

HIGH RESISTIVITY SOI WAFERS AND A METHOD OF MANUFACTURING THEREOF

I Peidous, S Kommu, G Wang… - US Patent App. 15 …, 2016 - freepatentsonline.com
A high resistivity single crystal semiconductor handle structure for use in the manufacture of
SOI structure is provided. The handle structure comprises an intermediate semiconductor …