Ni‐Based Ohmic Contacts to n‐Type 4H‐SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek… - … in Condensed Matter …, 2016 - Wiley Online Library
The fabrication of low‐resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …
[引用][C] Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek… - … in Condensed Matter …, 2016 - airitilibrary.com
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek… - Advances in …, 2016 - search.proquest.com
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek… - … in Condensed Matter …, 2016 - elibrary.ru
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability.
AV Kuchuk, P Borowicz, M Wzorek… - Advances in …, 2016 - search.ebscohost.com
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
[PDF][PDF] Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz… - 2016 - pdfs.semanticscholar.org
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
[PDF][PDF] Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz… - researchgate.net
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
Ni-based Ohmic contacts to n-type 4H-SiC: the formation mechanism and thermal stability
AV Kuchuk, P Borowicz, M Wzorek… - … in Condensed Matter …, 2016 - go.gale.com
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
Ni-Based Ohmic Contacts ton-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek… - … in Condensed Matter …, 2016 - cir.nii.ac.jp
抄録< jats: p> The fabrication of low-resistance and thermal stable ohmic contacts is
important for realization of reliable SiC devices. For the< jats: italic> n</jats: italic>-type SiC …
important for realization of reliable SiC devices. For the< jats: italic> n</jats: italic>-type SiC …
[PDF][PDF] Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz… - 2016 - scholar.archive.org
The fabrication of low-resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …
realization of reliable SiC devices. For the n-type SiC, Ni-based metallization is most …