Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier… - Journal of Vacuum …, 2010 - pubs.aip.org
Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O 2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
during HBr/O 2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
[PDF][PDF] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier, E Pargon… - Journal of Vacuum …, 2010 - hal.science
Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
[引用][C] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier, E Pargon… - Journal of Vacuum …, 2010 - cir.nii.ac.jp
[引用][C] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier… - Journal of Vacuum …, 2010 - ui.adsabs.harvard.edu
Reducing damage to Si substrates during gate etching processes by synchronous plasma
pulsing - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
pulsing - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
[引用][C] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier… - Journal of Vacuum …, 2010 - hal.univ-grenoble-alpes.fr
Reducing damage to Si substrates during gate etching processes by synchronous plasma
pulsing - Université Grenoble Alpes Accéder directement au contenu Documentation FR Se …
pulsing - Université Grenoble Alpes Accéder directement au contenu Documentation FR Se …
[PDF][PDF] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier, E Pargon… - researchgate.net
Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier… - Journal of Vacuum …, 2010 - pubs.aip.org
Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O 2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
during HBr/O 2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
[引用][C] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier… - Journal of Vacuum …, 2010 - hal.univ-grenoble-alpes.fr
Reducing damage to Si substrates during gate etching processes by synchronous plasma
pulsing - Université Grenoble Alpes Accéder directement au contenu Documentation FR Se …
pulsing - Université Grenoble Alpes Accéder directement au contenu Documentation FR Se …
[PDF][PDF] Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
C Petit-Etienne, M Darnon, L Vallier, E Pargon… - hal.science
Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon …
during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon …