Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

J Kopaczek, WM Linhart, M Baranowski… - Semiconductor …, 2015 - iopscience.iop.org
Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …

Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

J Kopaczek, WM Linhart, M Baranowski… - Semiconductor …, 2015 - inis.iaea.org
[en] Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied to
study the optical properties, particularly the localized and delocalized states and carrier …

[引用][C] Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

J Kopaczek, WM Linhart, M Baranowski… - Semiconductor Science …, 2015 - cir.nii.ac.jp
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and
time-resolved photoluminescence study | CiNii Research CiNii 国立情報学研究所 学術情報 …

[PDF][PDF] Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

J Kopaczek, WM Linhart, M Baranowski… - Semicond. Sci …, 2015 - researchgate.net
Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …

Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

J Kopaczek, WM Linhart… - Semiconductor …, 2015 - ui.adsabs.harvard.edu
Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …