Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

A Fekecs, M Chicoine, B Ilahi, AJ SpringThorpe… - Nuclear Instruments and …, 2015 - Elsevier
We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …
被引用次数：7 相关文章

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

A Fekecs, M Chicoine, B Ilahi… - … and Methods in …, 2015 - ui.adsabs.harvard.edu
We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …
[PDF] academia.edu

[PDF][PDF] Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

A Fekecs, M Chicoine, B Ilahi, AJ SpringThorpe… - academia.edu
We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

A Fekecs, M Chicoine, B Ilahi… - … and Methods in …, 2015 - inis.iaea.org
[en] Highlights:• InGaAsP/InP alloys were processed by MeV ion implantation and rapid
thermal annealing.• X-ray diffraction and Hall measurement results are compared for several …

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

A Fekecs, M Chicoine, B Ilahi… - … and methods in …, 2015 - papyrus.bib.umontreal.ca
We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

A Fekecs, M Chicoine, B Ilahi, AJ SpringThorpe… - Nuclear Instruments and …, 2015 - infona.pl
We report on critical ion implantation and rapid thermal annealing (RTA) process
temperatures that produce resistive Fe-or Ga-implanted InGaAsP/InP heterostructures. Two …