Low-voltage high-stability indium–zinc oxide thin-film transistor gated by anodized neodymium-doped aluminum

L Lan, M Zhao, N Xiong, P Xiao, W Shi… - IEEE electron device …, 2012 - ieeexplore.ieee.org
Neodymium-doped aluminum (Al-Nd) was used as a gate electrode and was anodized,
forming a layer of Nd: Al 2 O 3 as the dielectric for indium-zinc oxide (IZO) thin-film …
被引用次数：61 相关文章

[引用][C] Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

L Lan, M Zhao, N Xiong, P Xiao, W Shi, M Xu… - IEEE Electron Device …, 2012 - infona.pl
Neodymium-doped aluminum (Al–Nd) was used as a gate electrode and was anodized,
forming a layer of $\hbox {Nd: Al} _ {2}\hbox {O} _ {3} $ as the dielectric for indium–zinc …

[引用][C] Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

L Lan, M Zhao, N Xiong, P Xiao… - IEEE Electron …, 2012 - ui.adsabs.harvard.edu
Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized
Neodymium-Doped Aluminum - NASA/ADS Now on home page ads icon ads Enable full …

[引用][C] Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

L Lan, M Zhao, N Xiong, P Xiao, W Shi, M Xu… - IEEE Electron Device …, 2012 - cir.nii.ac.jp

[引用][C] Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

L LAN, M ZHAO, N XIONG, P XIAO… - IEEE electron device …, 2012 - pascal-francis.inist.fr
Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized
Neodymium-Doped Aluminum CNRS Inist Pascal-Francis CNRS Pascal and Francis …