Method to etch non-volatile metal materials

SSH Tan, W Yang, M Shen, RP Janek, J Marks… - US Patent …, 2016 - Google Patents
A method for etching a stack with an Ru containing layer disposed below a hardmask and
above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …
被引用次数：54 相关文章

Method to etch non-volatile metal materials

SSH Tan, W Yang, M Shen, RP Janek… - US Patent App. 14 …, 2015 - Google Patents
A method for etching a stack with an Ru containing layer disposed below a hardmask and
above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …

Method to etch non-volatile metal materials

SSH Tan, W Yang, M Shen, RP Janek… - US Patent …, 2016 - freepatentsonline.com
A method for etching a stack with an Ru containing layer disposed below a hardmask and
above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …

METHOD TO ETCH NON-VOLATILE METAL MATERIALS

SSH Tan, W Yang, M Shen, RP Janek… - US Patent App. 14 …, 2015 - freepatentsonline.com
A method for etching a stack with an Ru containing layer disposed below a hardmask and
above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …