High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

B Son, Y Lin, KH Lee, Y Wang, S Wu, CS Tan - Optics Express, 2020 - opg.optica.org
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
被引用次数：35 相关文章

High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation.

B Son, Y Lin, KH Lee, Y Wang, S Wu, CS Tan - Optics Express, 2020 - europepmc.org
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm 2 at-1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
[PDF] researchgate.net

[PDF][PDF] High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

B SON, Y LIN, KH LEE, YUE WANG, S WU, CS TAN - 2020 - researchgate.net
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …

High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

B Son, Y Lin, KH Lee, Y Wang, S Wu, CS Tan - Optics Express, 2020 - dr.ntu.edu.sg
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm2 at-1 V. A germanium-on-insulator (GOI) platform with a 200-mm …

High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

B Son, Y Lin, KH Lee, Y Wang, S Wu… - Optics …, 2020 - ui.adsabs.harvard.edu
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …

High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

B Son, Y Lin, KH Lee, Y Wang, S Wu, CS Tan - Optics Express, 2020 - cir.nii.ac.jp
抄録< jats: p> Germanium (Ge) vertical< jats: italic> pin</jats: italic> photodetectors were
demonstrated with an ultra-low dark current of 0.57 mA/cm< jats: sup> 2</jats: sup> at− 1 V …

High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

B Son, Y Lin, KH Lee, Y Wang, S Wu… - Optics …, 2020 - pubmed.ncbi.nlm.nih.gov
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm 2 at-1 V. A germanium-on-insulator (GOI) platform with a 200-mm …