A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations
Abstract InGaAs/Ge complementary FinFET technology has been considered as an
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations
YM Aneesh, B Bindu - Journal of Computational Electronics, 2023 - search.proquest.com
Abstract InGaAs/Ge complementary FinFET technology has been considered as an
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations
YM Aneesh, B Bindu - Journal of Computational Electronics, 2023 - dl.acm.org
Abstract InGaAs/Ge complementary FinFET technology has been considered as an
alternative channel material for CMOS technology, useful for next-generation digital VLSI …
alternative channel material for CMOS technology, useful for next-generation digital VLSI …