LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111) B Substrates

T Kato, T Matsumoto, T Ishida - Japanese Journal of Applied …, 1982 - iopscience.iop.org
The growth conditions of In 1-x Ga x As 1-y P y, layers on GaAs (111) B substrate and the
photoluminescence (PL) properties of these layers are described. The temperature …
被引用次数：19 相关文章

[引用][C] LPE GROWTH OF IN1-XGAXAS1-YPY WITH NARROW PHOTOLUMINESCENCE SPECTRUM ON GAAS (111) B SUBSTRATES

T KATO, T MATSUMOTO, T ISHIDA - 1982 - pascal-francis.inist.fr
LPE GROWTH OF IN1-XGAXAS1-YPY WITH NARROW PHOTOLUMINESCENCE
SPECTRUM ON GAAS(111)B SUBSTRATES CNRS Inist Pascal-Francis CNRS Pascal and …

LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates

T Kato, T Matsumoto, T Ishida - Japanese Journal of Applied …, 1982 - ui.adsabs.harvard.edu
The growth conditions of In 1-x Ga x As 1-y P y, layers on GaAs (111) B substrate and the
photoluminescence (PL) properties of these layers are described. The temperature …

LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates

T Kato, T Matsumoto, T Ishida - Japanese Journal of Applied Physics, 1982 - cir.nii.ac.jp
抄録< jats: p> The growth conditions of In< jats: sub> 1-< jats: italic> x</jats: italic></jats:
sub> Ga< jats: sub>< jats: italic> x</jats: italic></jats: sub> As< jats: sub> 1-< jats: italic> …

[引用][C] LPE Growth of In 1− x Ga x As 1− y P y with Narrow Photoluminescence Spectrum on GaAs (111) B Substrates

T Kato, T Matsumoto, T Ishida - Japanese Journal of Applied Physics, 1982 - jlc.jst.go.jp
The growth conditions of In 1− x Ga x As 1− y P y, layers on GaAs (111) B substrate and the
photoluminescence (PL) properties of these layers are described. The temperature …

LPE Growth of In1−xGaxAs1−yPy with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates

K Takamasa, M Takashi - Japanese Journal of Applied Physics, 1982 - cir.nii.ac.jp
抄録 The growth conditions of In 1− x Ga x As 1− y P y, layers on GaAs (111) B substrate and
the photoluminescence (PL) properties of these layers are described. The temperature …

[引用][C] LPE Growth of In 1− x Ga x As 1− y P y with Narrow Photoluminescence Spectrum on GaAs (111) B Substrates

T Kato, T Matsumoto, T Ishida - Japanese Journal of Applied Physics, 1982 - jlc.jst.go.jp
The growth conditions of In 1− x Ga x As 1− y P y, layers on GaAs (111) B substrate and the
photoluminescence (PL) properties of these layers are described. The temperature …