Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

B Bai, H Wang, Y Li, Y Hao, B Zhang, B Wang… - Chinese …, 2019 - iopscience.iop.org
We present a new charge trapping memory (CTM) device with the Au/Ga 2 O 3/SiO 2/Si
structure, which is fabricated by using the magnetron sputtering, high-temperature …
被引用次数：12 相关文章

Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

B Bai, H Wang, Y Li, Y Hao, B Zhang, B Wang… - Chinese Physics …, 2019 - inis.iaea.org
[en] We present a new charge trapping memory (CTM) device with the Au/Ga 2 O 3/SiO 2/Si
structure, which is fabricated by using the magnetron sputtering, high-temperature …

Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer

B Bai, H Wang, Y Li, Y Hao, B Zhang… - Chinese …, 2019 - ui.adsabs.harvard.edu
We present a new charge trapping memory (CTM) device with the Au/Ga 2 O 3/SiO 2/Si
structure, which is fabricated by using the magnetron sputtering, high-temperature …