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[HTML][HTML] Raman-based measurement of carrier concentration in n-type ZnO thin films under resonant conditions

Z Mao, C Fu, X Pan, X Chen, H He, W Wang, Y Zeng… - Physics Letters A, 2020 - Elsevier
For Raman-based carrier concentration determination in thin film semiconductors, above-
band-gap excitation is necessary, as the interference from underlying substrate is eliminated …
被引用次数：18 相关文章

Raman-based measurement of carrier concentration in n-type ZnO thin films under resonant conditions

Z Mao, C Fu, X Pan, X Chen, H He, W Wang… - Physics …, 2020 - ui.adsabs.harvard.edu
For Raman-based carrier concentration determination in thin film semiconductors, above-
band-gap excitation is necessary, as the interference from underlying substrate is eliminated …