Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

SP Watkins, G Haacke - Applied physics letters, 1991 - pubs.aip.org
Undoped p‐type GaAs epilayers were grown by low‐pressure metalorganic chemical vapor
deposition (MOCVD) at 650° C and 76 Torr using either arsine or tertiarybutylarsine (TBA) …
被引用次数：51 相关文章

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

SP Watkins, G Haacke - Applied Physics Letters, 1991 - cir.nii.ac.jp
抄録< jats: p> Undoped p-type GaAs epilayers were grown by low-pressure metalorganic
chemical vapor deposition (MOCVD) at 650 C and 76 Torr using either arsine or …

[引用][C] Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: arsine versus tertiarybutylarsine

SP WATKINS, G HAACKE - Applied physics letters, 1991 - pascal-francis.inist.fr
Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition :
arsine versus tertiarybutylarsine CNRS Inist Pascal-Francis CNRS Pascal and Francis …

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

SP Watkins, G Haacke - Applied Physics Letters, 1991 - ui.adsabs.harvard.edu
Undoped p-type GaAs epilayers were grown by low-pressure metalorganic chemical vapor
deposition (MOCVD) at 650 C and 76 Torr using either arsine or tertiarybutylarsine (TBA) …

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

SP Watkins, G Haacke - Appl. Phys. Lett, 1991 - pubs.aip.org
Undoped p-type GaAs epilayers were grown by low-pressure metalorganic chemical vapor
deposition (MOCVD) at 650 “C and 76 Torr using either amine or tertiarybutylarsine (TBA) …

[引用][C] Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: arsine versus tertiarybutylarsine

SP WATKINS, G HAACKE - Applied physics letters, 1991 - American Institute of Physics