A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 128 I/Os Using TSV Based Stacking

JS Kim, CS Oh, H Lee, D Lee… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
A 1.2 V 1 Gb mobile SDRAM, having 4 channels with 512 DQ pins has been developed with
50 nm technology. It exhibits 330.6 mW read operating power during 4 channel operation …
被引用次数：394 相关文章

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 128 I/Os Using TSV Based Stacking

JS Kim, CS Oh, H Lee, D Lee, HR Hwang… - IEEE Journal of Solid …, 2012 - infona.pl
A 1.2 V 1 Gb mobile SDRAM, having 4 channels with 512 DQ pins has been developed with
50 nm technology. It exhibits 330.6 mW read operating power during 4 channel operation …

A 1.2 V 12.8 GB/s 2Gb mobile Wide-I/O DRAM with 4× 128 I/Os using TSV-based stacking

JS Kim, CS Oh, H Lee, D Lee… - … Solid-State Circuits …, 2011 - ieeexplore.ieee.org
Mobile DRAM is widely employed in portable electronic devices due to its feature of low
power consumption. Recently, as the market trend renders integration of various features in …
[PDF] researchgate.net

[PDF][PDF] A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 128 I/Os Using TSV Based Stacking

JS Kim, CS Oh, H Lee, D Lee, HR Hwang… - IEEE JOURNAL OF …, 2012 - researchgate.net
512 DQ pins has been developed with 50 nm technology. It exhibits 330.6 mW read
operating power during 4 channel operation, achieving 12.8 GB/s data bandwidth. Test …
[PDF] archive.org

[PDF][PDF] A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 128 I/Os Using TSV Based Stacking

JS Kim, CS Oh, H Lee, D Lee, HR Hwang… - IEEE JOURNAL OF …, 2012 - scholar.archive.org
512 DQ pins has been developed with 50 nm technology. It exhibits 330.6 mW read
operating power during 4 channel operation, achieving 12.8 GB/s data bandwidth. Test …

[引用][C] A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4× 128 I/Os Using TSV Based Stacking

JS KIM, CHIS OH, JW RYU, K PARK… - IEEE journal of solid …, 2012 - pascal-francis.inist.fr
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …

[引用][C] A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4× 128 I/Os Using TSV Based Stacking

JS Kim, CS Oh, H Lee, D Lee… - IEEE Journal of …, 2012 - ui.adsabs.harvard.edu
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS A 1.2 V 12.8 …

[引用][C] A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 128 I/Os Using TSV Based Stacking

JS Kim, CS Oh, H Lee, D Lee, HR Hwang… - IEEE Journal of Solid …, 2012 - cir.nii.ac.jp
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\times$ 128 I/Os Using TSV Based
Stacking | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …

A 1.2 V 12.8 GB/s 2Gb mobile Wide-I/O DRAM with 4× 128 I/Os using TSV-based stacking

JS Kim, CS Oh, H Lee, D Lee, HR Hwang, S Hwang… - 2011 IEEE International … - infona.pl
Mobile DRAM is widely employed in portable electronic devices due to its fea ture of low
power consumption. Recently, as the market trend renders integra tion of various features in …

[引用][C] A 1.2 V 12.8 GB/s 2Gb mobile Wide-I/O DRAM with 4× 128 I/Os using TSV-based stacking

JS Kim, CS Oh, H Lee, D Lee, HR Hwang… - 2011 IEEE International …, 2011 - cir.nii.ac.jp
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based
stacking | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …