[HTML][HTML] Broadband millimeter-wave 5G power amplifier design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT

J Mayeda, DYC Lie, J Lopez - Electronics, 2022 - mdpi.com
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …

Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT

J Mayeda, DYC Lie, J Lopez - Electronics, 2022 - search.proquest.com
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …

Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT.

J Mayeda, DYC Lie, J Lopez - Electronics (2079-9292), 2022 - search.ebscohost.com
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …

Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT

JTTU Mayeda, DYC Lie, JTTU Lopez - 2022 - ttu-ir.tdl.org
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …

[PDF][PDF] Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT

J Mayeda, DYC Lie, J Lopez - 2022 - ttu-ir.tdl.org
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …