Improved Charge Carrier Transport Across Grain Boundaries in N‐type PbSe by Dopant Segregation
H Zhang, M Shen, C Stenz, C Teichrib, R Wu… - Small Science - Wiley Online Library
Doping is an important and routine method to tune the properties of semiconductors.
Dopants accumulated at grain boundaries (GBs) can exert a profound influence on …
Dopants accumulated at grain boundaries (GBs) can exert a profound influence on …
[PDF][PDF] Improved Charge Carrier Transport Across Grain Boundaries in N-type PbSe by Dopant Segregation
H Zhang, M Shen, C Stenz, C Teichrib, R Wu, L Schäfer… - 2024 - researchgate.net
Grain boundaries (GBs) are the interfaces between crystalline grains, which influence the
transport properties of charge carriers and phonons,[1, 2] playing a pivotal role in the …
transport properties of charge carriers and phonons,[1, 2] playing a pivotal role in the …