Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno, M Wakaki… - Applied physics …, 2002 - pubs.aip.org
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

ROLE OF THE WETTING LAYER IN THE CARRIER RELAXATION IN QUANTUM DOTS

S Sanguinetti, K Watanabe, T Tateno… - APPLIED PHYSICS …, 2002 - flore.unifi.it
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures-grown by modified droplet epitaxy-where no wetting layer is …

[引用][C] Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno, M Wakaki… - Applied Physics …, 2002 - cir.nii.ac.jp

[PDF][PDF] Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - APPLIED PHYSICS …, 2002 - nims.go.jp
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

[PDF][PDF] Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - APPLIED PHYSICS …, 2002 - researchgate.net
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - Applied Physics …, 2002 - aip.scitation.org
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - APPLIED PHYSICS …, 2002 - boa.unimib.it
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures-grown by modified droplet epitaxy-where no wetting layer is …

Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - Applied Physics …, 2002 - ui.adsabs.harvard.edu
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - APPLIED PHYSICS …, 2002 - pubs.aip.org
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …

[PDF][PDF] Role of the wetting layer in the carrier relaxation in quantum dots

S Sanguinetti, K Watanabe, T Tateno… - APPLIED PHYSICS …, 2002 - nims.go.jp
We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs
quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is …