Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

K Shinoda, N Miyoshi, H Kobayashi… - Journal of Physics D …, 2017 - iopscience.iop.org
The demand for precisely controlled etching is increasing as semiconductor device
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …
被引用次数：25 相关文章

Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

K Shinoda, N Miyoshi, H Kobayashi… - Journal of Physics …, 2017 - ui.adsabs.harvard.edu
The demand for precisely controlled etching is increasing as semiconductor device
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …

Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

K Shinoda, N Miyoshi, H Kobayashi, M Miura… - Journal of Physics. D …, 2017 - inis.iaea.org
[en] The demand for precisely controlled etching is increasing as semiconductor device
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …

[引用][C] Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device …

K Shinoda, N Miyoshi, H Kobayashi, M Miura… - Journal of Physics D …, 2017 - cir.nii.ac.jp
Selective atomic-level etching using two heating procedures, infrared irradiation and ion
bombardment, for next-generation semiconductor device manufacturing | CiNii Research CiNii …