Mapping Charge Recombination and the Effect of Point-Defect Insertion in Nanowire Heterojunctions

BT Zutter, H Kim, WA Hubbard, D Ren… - Physical Review …, 2021 - APS
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …
被引用次数：2 相关文章

Mapping Charge Recombination and the Effect of Point-Defect Insertion in GaAs Nanowire Heterojunctions

BT Zutter, H Kim, WA Hubbard, D Ren… - Physical Review …, 2021 - ui.adsabs.harvard.edu
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …

Mapping Charge Recombination and the Effect of Point-Defect Insertion in Nanowire Heterojunctions

BT Zutter, H Kim, WA Hubbard, D Ren… - Physical Review …, 2021 - experts.illinois.edu
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
locating electronic point defects in bulk semiconductors has previously been impossible …
[PDF] nsf.gov

[PDF][PDF] Mapping Charge Recombination and the Effect of Point-Defect Insertion in GaAs Nanowire Heterojunctions

BT Zutter, H Kim, WA Hubbard, D Ren… - Physical Review …, 2021 - par.nsf.gov
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but
lo-12 cating electronic point defects in bulk semiconductors has previously been impossible …