Plasma atomic layer etching for titanium nitride at low temperatures

D Shim, J Kim, Y Kim, H Chae - … of Vacuum Science & Technology B, 2022 - pubs.aip.org
Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …
被引用次数：5 相关文章

Plasma atomic layer etching for titanium nitride at low temperatures

D Shim, J Kim, Y Kim, H Chae - … of Vacuum Science & Technology B, 2022 - pubs.aip.org
Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …

Plasma atomic layer etching for titanium nitride at low temperatures

D Shim, J Kim, Y Kim, H Chae - Journal of Vacuum Science …, 2022 - scholarworks.bwise.kr
Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …

Plasma atomic layer etching for titanium nitride at low temperatures

D Shim, J Kim, Y Kim, H Chae - Journal of Vacuum Science …, 2022 - ui.adsabs.harvard.edu
Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …