S Miya, S Muramatsu, N Kuze, K Nagase… - Journal of Electronic …, 1996 - dl.acm.org
AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability | Journal of Electronic Materials skip to main content ACM Digital Library …
S MIYA, S MURAMATSU, N KUZE… - Journal of electronic …, 1996 - pascal-francis.inist.fr
AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability CNRS Inist Pascal-Francis CNRS Pascal and Francis …
S Miya, S Muramatsu, N Kuze… - Journal of …, 1996 - ui.adsabs.harvard.edu
InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs) …
S Miya, S Muramatsu, N Kuze, K Nagase… - Journal of Electronic …, 1996 - cir.nii.ac.jp
AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ …
[引用][C]AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability
S MIYA, S MURAMATSU, N KUZE, K NAGASE… - Journal of electronic …, 1996 - Springer