Heteroepitaxial growth of high mobility InAsP from the vapor phase

PJ Wang, BW Wessels - Applied physics letters, 1984 - pubs.aip.org
High quality InAsx p] _ x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …
被引用次数：24 相关文章

[引用][C] Heteroepitaxial growth of high mobility InAsP from the vapor phase

PJ WANG, BW WESSELS - Applied physics letters, 1984 - pascal-francis.inist.fr
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Heteroepitaxial growth of high mobility InAsP from the vapor phase

PJ Wang, BW Wessels - Applied Physics Letters, 1984 - pubs.aip.org
High quality InAs x P1− x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …

Heteroepitaxial growth of high mobility InAsP from the vapor phase

PJ Wang, BW Wessels - Applied Physics Letters, 1984 - scholars.northwestern.edu
High quality InAs x P 1-x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …

Heteroepitaxial growth of high mobility InAsP from the vapor phase

PJ Wang, BW Wessels - Applied Physics Letters, 1984 - ui.adsabs.harvard.edu
High quality InAs x P 1-x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …

[引用][C] Heteroepitaxial growth of high mobility InAsP from the vapor phase

PJ WANG, BW WESSELS - Applied physics letters, 1984 - American Institute of Physics